End of an era: Samsung Electronics abandons LPDDR4 and LPDDR4X
06.05.26
Samsung Electronics, the world leader in the semiconductor market, is taking a decisive step towards the technologies of the future, ending the life cycle of one of the most popular RAM standards in recent years. According to official data, the company is finally stopping the production of LPDDR4 and LPDDR4X chips, which will be a catalyst for global changes in the segment of mobile devices and high-performance systems.
Samsung Semiconductor solutions
Samsung Semiconductor division published a message on its official resource confirming that LPDDR4 and LPDDR4X mobile memory chips have been discontinued. Although previous forecasts indicated that the company would maintain these lines until the end of 2026, Samsung decided to force the events, completing the process well ahead of schedule.
Features and reasons for abandoning the old standards
The key driver of such a decision was the global race in the field of artificial intelligence. Scaling infrastructure for training and operation of neural networks requires colossal amounts of high-performance memory. The Korean tech giant made a strategic decision to refocus its production capacity on the release of more modern LPDDR5 memory and, more critically, on high-speed HBM (High Bandwidth Memory) chips.
The production of HBM memory used in AI computing accelerators has a much higher cost-effectiveness compared to standard mobile solutions. Thus, the company strives not only to follow technological trends, but also to maximize profits in the face of a growing shortage of semiconductors in the High-End segment.
Influence on the market and competition with Chinese companies
Samsung’s departure from this segment opens up new opportunities for other players. Experts note that the resulting vacuum in the supply of DDR3, DDR4 and LPDDR4 chips can be filled by Chinese manufacturers such as CXMT and GigaDevice. Back in April, these companies announced plans to expand production specifically in the “previous generation” memory segments.
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